Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1507
DESCRIPTION
·With TO-220 package
·High collector-emitter voltage
=300V
: V
CEO
·High frequency:f
APPLICATIONS
·For color TV chroma output applications
PINNING
PIN DESCRIPTION
=40MHz(Min)
T
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.2 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
15 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1507
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
COB Output capacitance IE=0; VCB=50V;f=1MHz 4 pF
fT Transition frequency IC=10mA ; VCE=30V 40 80 MHz
Collector-base breakdown voltage IC=10μA ;IE=0 300 V
Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V
Emitter-base breakdown voltage IE=10μA ;IC=0 7 V
Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V
Collector cut-off current VCB=200V;IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 100 μA
DC current gain IC=10mA ; VCE=10V 40 240
hFE classifications
R O Y
40-80 70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1507
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
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