Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1504
DESCRIPTION
·With TO-66 package
·Continuous collector current-I
·Power dissipation -PD=40W @T
APPLICATIONS
·High speed switching and linear amplification
·Switching regulators ,converters
PINNING (See Fig.2)
PIN DESCRIPTION
=2A
C
=25℃
C
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-Peak 5 A
IB Base current 1 A
PT Total power dissipation TC=25℃ 40 W
Tj Junction temperature 200 ℃
Collector-base voltage Open emitter 400 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 6 V
T
Storage temperature -65~200 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 5.0
th j-C
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1504
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=0.2A ; IB=0 300 V
Emitter-base breakdown voltage IE=1mA ; IC=0 6 V
Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V
Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V
Collector cut-off current VCB=400V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
hFE DC current gai n IC=1A ; VCE=4V 20
fT Transition frequency IC=0.1A ; VCE=10V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1504
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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