Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1501
DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Large power dissipation
APPLICATIONS
·For medium power amplifier applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Base
Emitter
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
ICM Collector current-peak 0.15 A
PC Collector power dissipation TC=25℃ 10 W
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1501
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CBO
Collector-base breakdown voltage
=100μA;IE=0
C
300 V
V
V
Collector-emitter breakdown voltage IC=1mA; IB=0 300 V
(BR)CEO
I
Emitter-base breakdown voltage
(BR)EBO
V
Collector-emitter saturation voltage IC=100mA IB=10m A 5.0 V
CEsat
=100μA; IC=0
E
5 V
VBE Base-emitter on voltage IC=50mA ; VCE=10V 1.2 V
h
DC current gain IC=10mA ; VCE=10V 30
FE-1
h
DC current gain IC=50mA ; VCE=10V 30 200
FE-2
I
Collector cut-off current VCB=300V ; IE=0 100
CBO
μA
COB Output capacitance IE=0; VCB=30V;f=1MHz 8 pF
fT Transition frequency IE=20mA ; VCB=30V 55 MHz
h
classifications
FE-2
P Q R S
30-60 50-100 80-150 100-200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1501
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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