Datasheet 2SC1472 Datasheet (HIT)

Application

High gain amplifier

Outline

TO-92 (1)

2SC1472(K)

Silicon NPN Epitaxial, Darlington

3

2

1. Emitter

2. Collector

3. Base

3

2

1

1

2SC1472 (K)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

40 V
30 V
10 V
300 mA
500 mA
500 mW

2

2SC1472 (K)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown

V

(BR)CEO

voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h

Collector to emitter saturation

h

h

V

CBO

EBO

FE1

FE2

FE3

CE(sat)

voltage
Base to emitter voltage V
Gain bandwidth product f

BE(sat)

T

Collector output capacitance Cob — — 10 pF VCB = 10 V, IE = 0, f = 1 MHz
Turn on time t

Turn off time t
Storage time t

on

off

stg

Note: 1. The 2SC1472(K) is grouped by hFE as follows.

AB

h

FE1

h

FE2

h

FE3

2000 to 100000 5000 to 100000
3000 min 10000 min
3000 min 10000 min

30 — — V IC = 1 mA, RBE = ∞

— — 100 nA V
— — 100 nA V

1

*

2000 — 100000 IC = 10 mA, VCE = 5 V

1

*

3000 — — IC = 100 mA, VCE = 5 V

= 30 V, IE = 0

CB

= 10 V, IC = 0

EB

(Pulse Test)

1

*

3000 — — IC = 400 mA, VCE = 5 V

(Pulse Test)

— — 1.5 V IC = 100 mA, IB = 0.1 mA

— — 2.0 V IC = 100 mA, IB = 0.1 mA
50 — — MHz VCE = 5 V, IC = 10 mA

— 60 — ns VCC = 11 V

I

= 100 IB1 = 100 mA

C

I

= –I

B2

B1

— 800 — ns
— 350 — ns

P.G.
tr, tf ≤ 15 ns
PW ≥ 10 µs
duty ratio ≤ 10%

Switching Time Test Circuit

D.U.T.

6 k

6 k

0.002

50

0.002

+–

+–

50

50

–6 V

100

11 V

Unit R : Ω

CRT

C : µF

13 V
Input

0

Output

0

Response Waveform

10%

90%

10%

t

d

t

on

90%

t

stg

t

off

90%

10%

3

2SC1472 (K)

Maximum Collector Dissipation Curve

600

(mW)

C

400

200

Collector Power Dissipation P

0

Ambient Temperature Ta (°C)

Typical Output Characteristics

200

5.0

4.5

160

(mA)

C

120

80

4.0

3.5

3.0

2.5

2.0

40

Collector Current I

1.5

1.0

0.5 µA

0

Collector to Emitter Voltage V

P

= 500 mW

C

CE

Pulse

IB = 0

(V)

Typical Output Characteristics

500

400

(mA)

C

300

30

25

35

20

18

16

14

12

10

8

6

200

4

100

Collector Current I

2 µA

P

= 500 mW

C

IB = 0

15050 100

0

Collector to Emitter Voltage V

CE

102.0 6.04.0 8.0

(V)

Collector Cutoff Current vs.

Collector to Emitter Voltage

10,000

(nA)

CEO

1,000

100

RBE = ∞

75

100

10

50

1.0
TC = 25°C

0.1

Collector Cutoff Current I

0.01

5010 3020 40

010 3020

Collector to Emitter Voltage VCE (V)

4

2SC1472 (K)

DC Current Transfer Ratio vs.

Collector Current

80

)

3

(×10

VCE = 5 V

70

Pulse

FE

60
50
40
30
20
10

DC Current Transfer Ratio h

0

Ta = 100°C

75

50

25

–25

0

–50

2.0
Collector Current I

(mA)

C

Collector to Emitter Saturation

Voltage vs. Base Current

2.4

2.0

1.6

(V)

CE (sat)

V

1.2

0.8

20 50

100 200

IC = 500 mA

0.4

Collector to Emitter Saturation Voltage

0

1 10030 3003 10 1,000

Base Current IB (µA)

5001005.0 502010 200

Ta = 25°C
Pulse

Collector to Emitter Saturation

Voltage vs. Collector Current

1.1

(V)

CE (sat)

V

1.0

0.9

0.8

0.7

0.6

IC = 1,000 I

B

Ta = –50°C

–25

0

25
50

75

100

0.5

0.4

Collector to Emitter Saturation Voltage

0.3
12

Collector Current I

Base to Emitter Saturation

Voltage vs. Collector Current

2.0

–25

25

100

Pulse

0

50
75

(V)

BE (sat)

V

1.8

1.6

1.4

1.2

1.0

IC = 1,000 I

B

Ta = –50°C

0.8

0.6

Base to Emitter Saturation Voltage

0.4
1 10020 2002105 50 500

Collector Current IC (mA)

(mA)

C

Pulse

5001005502010 200

5

2SC1472 (K)

Input and Output Capacitance vs. Voltage

10

(pF)

ob

8

(pF)

ib

f = 1 MHz

Switching Time vs. Collector Current

30

IC = 100 IB1 = –100 I

10

VCC = 10.5 V

B2

6

Cib(IC = 0)

4

2

Collector Output Capacitance C

Emitter Input Capacitance C

0

0.1 3031.0 100.3
Collector to Base Voltage VCB (V)
Emitter to Base Voltage V

Switching Time Test Circuit

P.G.

50

tr, tf ≤ 15 ns
PW ≥ 10 µs
duty ratio ≤ 10%

–6 V

D.U.T.

0.002
+–

50

0.002

50

Cob(IE = 0)

EB

+–

(V)

Unit R : Ω

10.5 V

CRT

C : µF

Switching Time t (µs)

13 V

Input

0

Output

0

3

1.0

0.3

0.1

t

off

t

stg

t

on

t

d

0.03

0.3 3010 1001.0 3 300
Base Current IC (mA)

Response Waveform

90%

10%

90%

10%

t

d

t

on

t

stg

90%

10%

t

off

6

Unit: mm

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 (1)
Conforms
Conforms

0.25 g

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