Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1450
DESCRIPTION
·With TO-66 package
·Wide area of safe operation
·High collector-emitter breakdown voltage
:V
=150V(min)
CEO
·Complement to type 2SA766
APPLICATIONS
·For power amplifier and vertical output
applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 150 V
CBO
V
Collector-emitter voltage Open base 150 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 0.4 A
PD Total power dissipation TC=80℃ 20 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1450
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=30mA; IB=0 150 V
(BR)CEO
Collector-base breakdown voltage IC=1mA; IE=0 150 V
(BR)CBO
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V
CEsat
I
Collector cut-off current VCB=150V;IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 10 μA
EBO
hFE DC current gain IC=0.1A ; VCE=5V 30 150
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1450
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Loading...