Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1448
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: V
APPLICATIONS
·Power amplifier applications
·Vertical output applications
PINNING
=150V(min)
CEO
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
IB Base current 0.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃ 1.5
=25℃ 25
T
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1448
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=30mA; IB=0 150 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V
CEsat
I
Collector cut-off current VCB=150V;IE=0 20 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 20 μA
EBO
hFE DC current gain IC=0.5A ; VCE=10V 40 140
fT Transition frequency IC=0.5A ; VCE=10V 5 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1448
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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