Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1447
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For color TV chroma output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.15 A
PC Collector power dissipation
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
20 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1447
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CBO
Collector-base breakdown voltage
=10μA ;IE=0
C
300 V
V
V
Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V
(BR)CEO
I
Emitter-base breakdown voltage
(BR)EBO
V
Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V
CEsat
I
Collector cut-off current VCB=250V;IE=0 1.0
CBO
I
Emitter cut-off current VEB=5V; IC=0 1.0
EBO
h
DC current gain IC=50mA ; VCE=10V 40 170
FE
=10μA ;IC=0
E
7 V
μA
μA
fT Transition frequency IC=10mA ; VCE=30V 80 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1447
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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