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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1445
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 100 V
CBO
V
Collector-emitter voltage Open base 80 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current 6 A
IB Base current 1 A
PD Total power dissipation TC=25℃ 40 W
Tj Junction temperature 150 ℃
T
Storage temperature -65~200 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1445
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE sat-1
V
BE sat-2
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=100mA ;IB=0 80 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 0.7 V
Collector-emitter saturation voltage IC=6A ;IB=0.6A 1.2 V
Base-emitter saturation voltage IC=2A; IB=0.2A 1.2 V
Base-emitter saturation voltage IC=6A ;IB=0.6A 2.0 V
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
hFE DC current gain IC=1A ; VCE=4V 30
fT Transition frequency IC=0.5A ; VCE=10V 10 MHz
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1445
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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