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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1444
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For switching and wide-band
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 80 V
CBO
V
Collector-emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current 6 A
IB Base current 1 A
PD Total power dissipation TC=25℃ 40 W
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1444
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=30mA ;IB=0 60 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=6A; IB=1A 1.5 V
Base-emitter on voltage IC=6A ; VCE=4V 2.0 V
Collector cut-off current VCB=80V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=4V 30
DC current gain IC=3A ; VCE=4V 15
fT Transition frequency IC=0.5A ; VCE=10V 10 MHz
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1444
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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