Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1431
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
APPLICATIONS
·For use in high frequency power
amplifier applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 110 V
CBO
V
Collector-emitter voltage Open base 110 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 2 A
PD Total power dissipation TC=25℃ 23 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1431
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE sat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=50mA ;IB=0 110 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V
Base-emitter saturation voltage IC=1A; IB=0.1A 1.2 V
Collector cut-off current VCB=110V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
μA
μA
hFE DC current gain IC=0.4A ; VCE=2V 50 240
fT Transition frequency IC=0.4A ; VCE=10V 30 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1431
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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