Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1325
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Designed for use in large screen
color deflection circuits
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 6 A
ICM Collector current-peak 12 A
IB Base current 2 A
PD Total power dissipation TC=25℃ 80 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 6 V
T
Storage temperature -65~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction to case 1. 56
th j-C
℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1325
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=100mA; IB=0 600 V
Collector-emitter saturation voltage IC=5 A;IB=1.2 A 4.0 V
Base-emitter saturation voltage IC=5 A;IB=1.2 A 1.1 V
Collector cut-off current VCE=1500V;VBE=0 1.0 mA
Collector cut-off current VCB=1000V; IE=0 20 μA
Emitter cut-off current VEB=5V; IC=0 200 μA
DC current gain IC=1A ; VCE=15V 10 45
DC current gain IC=5A ; VCE=15V 5 35
ts Storage time 10 μs
I
=5A ;IB1=-IB2=1.0A
C
PW=20μs
tf Fall time
0.8 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1325
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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