Datasheet 2SC1317 Datasheet (Panasonic)

Transistors

2SC1317, 2SC1318

Silicon NPN epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SA0719 and 2SA0720

■ Features

• Low collector-emitter saturation voltage V

• Complementary pair with 2SA0719 and 2SA0720

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

2SC1317 V

2SC1318 60

2SC1317 V

2SC1318 50

CE(sat)

CBO

CEO

EBO

C

CP

C

j

−55 to +150 °C

stg

30 V

25 V

7V

0.5 A

1A

625 mW

150 °C

0.45

0.7

2.5

+0.15
–0.1

±0.1

+0.6
–0.2

123

5.0

±0.2

2.5

+0.6
–0.2

±0.2

0.7

±0.2

2.3

4.0

±0.2

5.1

±0.5

12.9

+0.15

0.45

–0.1

1: Emitter
2: Collector
3: Base

TO-92-B1 Package

Unit: mm

±0.2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

2SC1317 V

CBOIC

2SC1318 60

2SC1317 V

CEOIC

2SC1318 50

EBOIE

I

1

*

CBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

1

*

1

*

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank Q R S

h

FE1

85 to 170 120 to 240 170 to 340

= 10 µA, IE = 030V

= 10 mA, IB = 025V

= 10 µA, IC = 07V

VCB = 20 V, IE = 0 0.1 µA

2

*

VCE = 10 V, IC = 150 mA 85 340 

VCE = 10 V, IC = 500 mA 40 

= 300 mA, IB = 30 mA 0.35 0.60 V

= 300 mA, IB = 30 mA 1.1 1.5 V

VCB = 10 V, IE = −50 mA, f = 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF

ob

200 MHz

Publication date: March 2003 SJC00100CED

1

2SC1317, 2SC1318

PC  T

800

(mW)

600

C

400

200

a

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

V

 I

100

CE(sat)

C

IC / IB = 10

(V)

CE(sat)

10

1

0.1

Collector-emitter saturation voltage V

0.01

0.01 0.1 1 10

Ta = 75°C

25°C

−25°C

Collector current IC (A)

IC  V

9 mA

8 mA

7 mA

6 mA

CE

5 mA

4 mA

0.8

0.7

0.6

(A)

C

0.5

0.4

0.3

Collector current I

0.2

0.1

0

IB = 10 mA

020164128

Collector-emitter voltage VCE (V)

V

 I

100

BE(sat)

C

(V)

BE(sat)

10

25°C

1

0.1

Ta = 75°C

−25°C

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

Collector current IC (A)

Ta = 25°C

3 mA

2 mA

1 mA

IC / IB = 10

IC  I

0.8

0.7

0.6

(A)

C

0.5

0.4

0.3

Collector current I

0.2

0.1

0

0108264

B

Base current IB (mA)

hFE  I

300

250

FE

Ta = 75°C

200

150

100

Forward current transfer ratio h

25°C

−25°C

50

0

0.01 0.1 1 10

C

VCE = 10 V

Collector current IC (A)

VCE = 10 V

= 25°C

T

a

fT  I

240

200

(MHz)

160

T

120

80

Transition frequency f

40

0

−1 −10 −100

Emitter current IE (mA)

2

E

VCB = 10 V

= 25°C

T

a

Cob  V

12

(pF)

ob

10

C

8

6

4

2

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

IE = 0
f = 1 MHz
T

a

Collector-base voltage VCB (V)

SJC00100CED

= 25°C

V

 R

120

100

(V)

CER

V

80

60

40

20

Collector-emitter voltage

(Resistor between B and E)

0

1 10 100 1 000

CER

2SC1318

2SC1317

Base-emitter resistance RBE (kΩ)

BE

IC = 2 mA
T

= 25°C

a

)

a

(T

CEO

I

= 25°C)

a

(T

CEO

I

2SC1317, 2SC1318

I

 T

4

10

3

10

2

10

10

CEO

a

VCE = 10 V

(A)

C

Collector current I

Safe operation area

10

1

0.1

0.01

Single pulse

= 25ºC

T

a

I

CP

I

C

t = 10 ms

t = 1 s

DC

1

0 20016040 12080

Ambient temperature Ta (°C)

0.001

0.1 1 10 100

Collector-emitter voltage VCE (V)

SJC00100CED

3

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