Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1316
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·Suitable for switching power supplies
in TV sets
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
PC Collector power dissipation TC=25℃ 23 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 750 V
Collector-emitter voltage Open base 750 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1316
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=10mA ;IB=0 750 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=1A ;IB=0.2A 3.0 V
CEsat
V
Base-emitter saturation voltage IC=1A ;IB=0.2A 1.2 V
BEsat
I
Collector cut-off current VCB=750V;IE=0 100 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 100 μA
EBO
h
DC current gain IC=2A ; VCE=3V 4 14
FE
fT Transition frequency IC=0.5A ; VCE=10V 8.5 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1316
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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