Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1295
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
PT Total power dissipation TC=25℃ 40 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 1000 V
Collector-emitter voltage Open base 350 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1295
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter sustaining voltage IC=100mA; IB=0 350 V
Emitter-base breakdown votage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=2 A;IB=1A 5.0 V
Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V
Collector cut-off current VCB=1000V;IE=0 0.1 mA
Emitter cut-off current VEB=5V;IC=0 0.1 mA
hFE DC current gai n IC=1.5A ; VCE=5V 3 13
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1295
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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