Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1235
DESCRIPTION
·With TO-66 package
·High collector-emitter voltage
=300V
: V
CEO
APPLICATIONS
·For use in line-operated color TV chroma
output circuits and sound output circuits.
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.1 A
PT Collector power dissipation TC=70℃ 6.5 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1235
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
Collector-base breakdown voltage IC=50μA ;IE=0 300 V
Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V
Emitter-base breakdown voltage IE=50μA ;IC=0 7 V
Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V
Collector cut-off current VCB=300V;IE=0 5 μA
Emitter cut-off current VEB=7V; IC=0 5 μA
DC current gain IC=50mA ; VCE=10V 30 160
fT Transition frequency IC=10mA ; VCE=20V 60 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1235
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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