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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1227
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Suitable for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 3 A
PT Total power dissipation TC=25℃ 100 W
Tj Junction temperature 150 ℃
T
stg
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 7 V
Storage temperature -55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance from junction to case 1.25 ℃/W
th j-c
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1227
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=50mA ; IB=0 200 V
Collector-base breakdown voltage IC=0.1mA ; IE=0 300 V
Emitter-base breakdown voltage IE=0.1mA ; IC=0 7 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V
Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V
Collector cut-off current VCB=300V; IE=0 20 μA
Emitter cut-off current VEB=7V; IC=0 20 μA
DC current gain IC=5A ; VCE=5V 50
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1227
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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