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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1185
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·High breakdown voltage
:V
=250V(min)
CEO
APPLICATIONS
·For voltage regulator,inverter,switching
mode power supply applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 300 V
CBO
V
Collector-emitter voltage Open base 250 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 0.7 A
PD Total power dissipation TC=25℃ 50 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1185
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=30mA; IB=0 250 V
(BR)CEO
Collector-base breakdown voltage IC=1mA; IE=0 300 V
(BR)CBO
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V
CEsat
V
Base-emitter saturation voltage IC=500mA; IB=100mA 1.5 V
BEsat
I
Collector cut-off current VCB=200V;IE=0 10 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 10 μA
EBO
hFE DC current gain IC=0.4A ; VCE=10V 40 200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1185
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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