Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1170
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Designed for use in large screen color
deflection circuits
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3.5 A
IB Base current 1.0 A
PC Collector power dissipation TC=25℃ 50 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 1200 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 6 V
T
Storage temperature -55~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
Thermal resistance junction case 2.5 ℃/W
th j-C
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1170
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
BEsat
I
CES
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 4 MHz
Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V
Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V
Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.2 V
Collector cut-off current VCE=1200V; VBE=0 1.0 mA
Collector cut-off current VCB=800V; IE=0 20 μA
Emitter cut-off current VEB=5V; IC=0 20 μA
DC current gain IC=0.5A ; VCE=10V 10
DC current gain IC=2A ; VCE=10V 5
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1170
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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