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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1163
DESCRIPTION ·
·With TO-126 package
·High power dissipation
APPLICATIONS
·Useful for high-voltage general purpose
applications
·Suitable for transformerless ,line-operated
equipment
PINNING (see Fig.2)
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute Maximun Ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 300 V
CBO
V
Collector-emitter voltage Open base 300 V
CEO
V
Emitter-base voltage Open collector 4 V
EBO
IC Collector current 0.1 A
PD Total power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
℃)
T
=25℃
C
20.8 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 6.25 ℃/W
th j-C
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1163
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter sustaining voltage IC=1.0mA;IB=0 300 V
CEO(SUS)
Collector-base breakdown voltage IC=100μA;IE=0 300 V
(BR)CBO
Emitter-base breakdown voltage IE=100μA;IC=0 4 V
(BR)EBO
V
Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V
CEsat
V
Base-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V
BEsat
I
Collector cut-off current VCB=200V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=3V; IC=0 10 μA
EBO
hFE DC current gai n IC=50mA ; VCE=10V 30 240
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1163
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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