Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1161
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency high voltage power
amplifier TV vertical deflection output
applications.
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 200 V
CBO
V
Collector-emitter voltage Open base 120 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
IC Collector current 1 A
PD Total power dissipation TC=25℃ 15 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1161
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE sat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=500mA; IB=50mA 1.5 V
Base-emitter saturation voltage IC=500mA; IB=50mA 2.0 V
Collector cut-off current VCB=120V; IE=0 1.0
Emitter cut-off current VEB=6V; IC=0 1.0
μA
μA
hFE DC current gain IC=200mA ; VCE=5V 30 200
fT Transition frequency IC=200mA ; VCE=10V 5 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1161
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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