Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1157
DESCRIPTION
·With TO-202 package
·High transition frequency
·Complement to type 2SA647
APPLICATIONS
·For power amplifier switching
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 0.8 A
PC Collector power dissipation TC=25℃ 7 W
Tj Junction temperature -40~150 ℃
Collector-base voltage Open emitter 110 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
℃)
T
Storage temperature -40~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1157
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=300mA IB=30m A 1.2 V
CEsat
V
Base-emitter saturation voltage IC=300mA IB=30m A 1.5 V
BEsat
I
V
(BR)CBO
Collector-base breakdown voltage
=100μA;IE=0
C
110 V
V
V
Collector-emitter breakdown voltage IC=1mA; IB=0 100 V
(BR)CEO
I
Emitter-base breakdown voltage
(BR)EBO
I
Collector cut-off current VCB=110V; IE=0 1.0
CBO
I
Emitter cut-off current VEB=5V; IC=0 1.0
EBO
=100μA; IC=0
E
5 V
μA
μA
hFE DC current gain IC=300mA ; VCE=4V 20 300
fT Transition frequency IE=100mA ; VCB=10V 70 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1157
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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