Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1116
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For audio and general purpose
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
PC Collector power dissipation
Collector-base voltage Open emitter 180 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
100 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1116
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=25mA ;IB=0 120 V
(BR)CEO
(BR)CBO
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=1A ; VCE=12V 10 MHz
Collector-base breakdown voltage IC=1mA ;IE=0 180 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V
Collector cut-off current VCB=180V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=3A ; VCE=4V 50
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1116
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...