Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1106
DESCRIPTION
·With TO-3 package
·High power dissipation
·High breakdown voltage
APPLICATIONS
·For voltage regulator ,inverter and switching
mode power supply applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
PC Collector power dissipation TC=25℃ 80 W
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 350 V
Collector-emitter voltage Open base 250 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1106
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
V
Collector-emitter sustaining voltage IC=0.1A ;IB=0 250 V
Collector-base breakdown voltage IC=1mA ;IE=0 350 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=1.5A; IB=0.3A 5.0 V
CEsat
Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V
BEsat
I
Collector cut-off current VCB=350V; IE=0 0.1 mA
CBO
I
Emitter cut-off current VEB=5V; IC=0 0.1 mA
EBO
h
DC current gain IC=0.2A ; VCE=5V 30
FE
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1106
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Loading...