Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1051
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For low frequency power amplifier and
large power switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 7 A
PC Collector power dissipation TC=25℃ 60 W
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1051
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V
(BR)CEO
(BR)CBO
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V
I
CBO
I
EBO
h
FE
fT Transition frequency IC=0.5A ; VCE=5V 8 MHz
Collector-base breakdown voltage IC=1mA ;IE=0 150 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V
Collector cut-off current VCB=150V; IE=0 0.1 mA
Emitter cut-off current VEB=5V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 40 320
hFE Classifications
C D E F
40-80 60-120 100-200 160-320
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1051
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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