Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB950A
DESCRIPTION
·High DC Current Gain : h
·High Speed Switching
·Complement to Type 2SD1276A
APPLICATIONS
·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 2000(Min.)@IC= -3A
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage -80 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -4 A
Collector Current-Peak -8 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ T
=25℃
C
Junction Temperature 150
2
W
40
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor 2SB950A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= -30mA ; IB= 0
C
-80 V
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA B -2.0 V
Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA B -4.0 V
Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V
Collector Cutoff Current VCB= -100V ; IE= 0 -0.2 mA
Collector Cutoff Current VCE= -40V ; IB= 0 B -0.5 mA
Emitter Cutoff Current VEB= -5V ; IC= 0 -2.0 mA
DC Current Gain IC= -0.5A ;VCE= -3V 1000
DC Current Gain IC= -3A ; VCE= -3V 2000 10000
Current-Gain—Bandwidth Product
Switching times
=-0.5A;VCE= -10V;f
I
C
test
=1MHz
20 MHz
t
on
t
stg
t
f
Turn-on Time 0.3
= -3A,IB1= -IB2= -12mA,
I
Storage Time 2.0
Fall Time
C
V
CC
= -50V
0.5
h
Classifications
FE-2
Q P
2000-5000 4000-10000
isc Website：www.iscsemi.cn
2
μs
μs
μs
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