Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB947
DESCRIPTION
·Low Collector Saturation Voltage : V
·High Speed Switching
APPLICATIONS
·Designed for low-voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= -0.6V(Max)@IC= -7A
CE(sat)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage -40 V
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -10 A
Collector Current-Peak -15 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
2
W
35
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB947
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= -10mA; IB= 0
C
-20 V
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
stg
Collector-Emitter Saturation Voltage IC= -7A; IB= -0.23A B -0.6 V
Base-Emitter Saturation Voltage IC= -7A; IB= -0.23A B -1.5 V
Collector Cutoff Current VCB= -40V; IE= 0 -50
Emitter Cutoff Current VEB= -5V; IC= 0 -50
DC Current Gain IC= -0.1A; VCE= -2V 45
DC Current Gain IC= -2A; VCE= -2V 90 260
Current-Gain—Bandwidth Product
Turn-on Time 0.1
Storage Time 0.5
=-0.5A; VCE= -10V; f
I
C
= -2A, IB1= -IB2= -66mA
I
C
=10MHz
test
μA
μA
150 MHz
μs
μs
Fall Time
Classifications
h
t
f
FE-1
Q P
90-180 130-260
isc Website：www.iscsemi.cn
2
0.1
μs
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