Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB946A
DESCRIPTION
·Low Collector Saturation Voltage : V
CE(sat)
·Good Linearity of h
·Large Collector Current I
·Complement to Type 2SD1271A
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(T
= -0.5V(Max)@IC= -5A
FE
C
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage -150 V
Collector-Emitter Voltage -100 V
Emitter-Base Voltage -7 V
Collector Current-Continuous -7 A
Collector Current-Peak -15 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ T
=25℃
C
Junction Temperature 150
2
W
40
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB946A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= -10mA ; IB= 0
C
-100 V
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
stg
Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A B -0.5 V
Base-Emitter Saturation Voltage IC= -5A; IB= -0.25A B -1.5 V
Collector Cutoff Current VCB= -100V ; IE= 0 -10
Emitter Cutoff Current VEB= -5V ; IC=0 -50
DC Current Gain IC= -0.1A ; VCE= -2V 45
DC Current Gain IC= -3A ; VCE= -2V 60 260
Current-Gain—Bandwidth Product
Turn-on Time 0.5
Storage Time 1.5
=-0.5A; VCE= -10V; f
I
C
= -3.0A ,IB1= -IB2= -0.3A,
I
C
=10MHz
test
μA
μA
30 MHz
μs
μs
Fall Time
Classifications
h
t
f
FE-2
R Q P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
2
0.1
μs
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