Datasheet 2SB946 Specification

Power Transistors

2SB0946 (2SB946)

Silicon PNP epitaxial planar type

For power switching

Complementary to 2SD1271

■ Features

• Low collector-emitter saturation voltage V

• Satisfactory linearity of forward current transfer ratio h

• Large collector current I

C

• Full-pack package which can be installed to the heat sink with one screw

CE(sat)

FE

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power

CBO

CEO

EBO

CP

P

C

C

dissipation Ta = 25°C2

Junction temperature T

Storage temperature T

stg

−130 V

−80 V

−7V

−7A

−15 A

40 W

j

150 °C

−55 to +150 °C

±0.3

16.7

±0.5

14.0
Solder Dip

±0.1

0.7

±0.2

7.5

(4.0)

10.0

5.5

±0.2

213

±0.2

φ 3.1

1.4

±0.1

0.8

±0.1

2.54

±0.3

5.08

±0.5

TO-220F-A1 Package

±0.2

4.2

±0.1

Unit: mm

4.2

2.7

±0.2

1.3

±0.2

+0.2

0.5

–0.1

1: Base
2: Collector
3: Emitter
EIAJ: SC-67

±0.2

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

CEOIC

I

CBO

I

EBO

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Turn-on time t

Storage time t

on

stg

Fall time t

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R Q P

h

FE2

Publication date: February 2003 SJD00025BED

60 to 120 90 to 180 130 to 260

= −10 mA, IB = 0 −80 V

VCB = −100 V, IE = 0 −10 µA

VEB = −5 V, IC = 0 −50 µA

VCE = −2 V, IC = − 0.1 A 45 

*VCE = −2 V, IC = −3 A 60 260

= −5 A, IB = − 0.25 A − 0.5 V

= −5 A, IB = − 0.25 A −1.5 V

VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz

T

IC = −3 A, IB1 = − 0.3 A, IB2 = 0.3 A 0.5 µs

VCC = −50 V 1.5 µs

f

0.1 µs

Note) The part number in the parenthesis shows conventional part number.

1

2SB0946

PC  T

50

40

(W)

C

30

20

10

Collector power dissipation P

0

(3)

(4)

0 16040 12080

a

(1)TC=Ta
(2)With a 100×100×2mm

Al heat sink

(3)With a 50×50×2mm

Al heat sink

(4)Without heat sink

(P

=2W)

C

(1)

(2)

Ambient temperature Ta (°C)

V

 I

−100

BE(sat)

C

(V)

BE(sat)

−10

−1

− 0.1

TC=–25˚C

100˚C

25˚C

Base-emitter saturation voltage V

− 0.01

− 0.01

− 0.1 −1 −10

Collector current IC (A)

IC/IB=20

IC  V

–110mA

–100mA

–90mA

CE

–80mA

–70mA

TC=25˚C

–60mA

–40mA

–30mA

(A)

C

−10

IB=–120mA

−8

−6

−4

Collector current I

−2

0

0 −10−2 −4 −8−6

Collector-emitter voltage VCE (V)

hFE  I

4

10

FE

3

10

TC=100˚C

2

10

–25˚C

10

C

VCE=–2V

25˚C

Forward current transfer ratio h

1

− 0.1 −1 −10 −100

Collector current IC (A)

–20mA

–10mA

−100

CE(sat)

C

IC/IB=20

V

 I

(V)

CE(sat)

−10

−1

TC=100˚C

− 0.1

Collector-emitter saturation voltage V

− 0.01

− 0.1

–25˚C

25˚C

−1 −10 −100

Collector current IC (A)

fT  I

4

10

3

10

(MHz)

T

2

10

10

C

VCE=–10V
f=10MHz
T

=25˚C

C

Transition frequency f

1

− 0.01 − 0.1 −1 −10

Collector current IC (A)

4

10

(pF)

ob

C

3

10

2

10

10

Collector output capacitance

(Common base, input open circuited)

1

− 0.1 −1 −10 −100

Cob  V

CB

Collector-base voltage VCB (V)

2

IE=0
f=1MHz
T

=25˚C

C

)

100

µs

(

f

10

, Fall time t

stg

1

, Storage time t

on

0.1

Turn-on time t

0.01
0

Collector current IC (A)

SJD00025BED

ton, t

, tf  I

stg

C

Pulsed tw=1ms
Duty cycle=1%
I

=10

C/IB

(–I

)

B1=IB2

V

=–50V

CC

T

=25˚C

C

t

stg

t

on

t

f

−8−2 −6−4

Safe operation area

−100

I

CP

−10

I

C

(A)

C

t=10ms

−1

Collector current I

− 0.1

–0.01

−1

Collector-emitter voltage VCE (V)

Non repetitive pulse
T

DC

−10 −100

C

=25˚C

t=0.5ms

t=1ms

−1 000

2SB0946

3

10

2

10

(°C/W)

th

10

1

−1

10

Thermal resistance R

−2

10

−4

10

−3

10

Rth  t

(1)Without heat sink
(2)With a 100×100×2mm Al heat sink

(1)

(2)

4

3

−1

−2

10

10110

Time t (s)

2

10

10

10

SJD00025BED

3

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2002 JUL