Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB944
DESCRIPTION
·Low Collector Saturation Voltage
: V
·Collector-Emitter Breakdown Voltage-
: V
·Good Linearity of h
·Complement to Type 2SD1269
APPLICATIONS
·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(T
= -0.5V(Max)@ IC= -3A
CE(sat)
= -80V (Min)
(BR)CEO
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage -130 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -7 V
Collector Current-Continuous -4 A
Collector Current-Peak -8 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
@ T
=25℃
a
Junction Temperature 150
35
W
2
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB944
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
sat
V
BE(
sat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -80 V
Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -0.5 V
)
Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -1.5 V
)
Collector Cutoff Current VCB= -100V; IE= 0 -10 μA
Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA
DC Current Gain IC= -0.1A; VCE= -2V 45
DC Current Gain IC= -1A; VCE= -2V 60 260
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V; f= 10MHz 30 MHz
Turn-on Time 0.15 μs
Storage Time 0.8 μs
I
= -1A ; IB1= -IB2= -0.1A
C
t
f
Fall Time
0.15 μs
h
classifications
FE-2
Q P
90-180 130-260
isc Website：www.iscsemi.cn
2
Loading...