Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB925
DESCRIPTION
·High Collector Current:: IC= -7A
·Low Collector Saturation Voltage
: V
CE(sat)
·High Speed Switching
APPLICATIONS
·Designed for low voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= -0.6V(Max)@IC= -5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
T
stg
Collector-Base Voltage -40 V
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -7 A
Collector Current-Peak -12 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
30 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB925
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Switching times
t
on
Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -20 V
Collector-Emitter Saturation Voltage IC= -5A; IB= -0.16A B -0.6 V
Base-Emitter Saturation Voltage IC= -5A; IB= -0.16A B -1.5 V
Collector Cutoff Current VCB= -40V; IE= 0 -50 μA
Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA
DC Current Gain IC= -0.1A; VCE= -2V 45
DC Current Gain IC= -2A; VCE= -2V 60 260
Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 140 pF
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 150 MHz
Turn-on Time 0.1 μs
V
= -20V;IC= -2A;
CC
= -IB2= -66mA
I
B1
0.1 μs
h
t
stg
t
f
FE-2
Storage Time 0.5 μs
Fall Time
Classifications
R Q P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
2
Loading...