Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB921
DESCRIPTION
·High Collector Current:: IC= -7A
·Low Collector Saturation Voltage
: V
·Complement to Type 2SD1237
APPLICATIONS
·Designed for large current switching of relay drivers, highspeed inverters, converters applications.
ABSOLUTE MAXIMUM RATINGS(T
= -0.5V(Max)@IC= -4A
CE(sat)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
Collector-Base Voltage -120 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -6 V
Collector Current-Continuous -7 A
Collector Current-Peak -12 A
Total Power Dissipation
=25℃
@ T
C
C
Total Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
J
40
W
1.75
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB921
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
t
on
Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -80 V
Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -120 V
Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V
Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.5 V
Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA
Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA
DC Current Gain IC= -1A; VCE= -2V 70 280
DC Current Gain IC= -4A; VCE= -2V 30
Current-Gain—Bandwidth Product IC= -1A; VCE= -5V 20 MHz
Turn-on Time 0.2 μs
R
= 1.67Ω, VCC= -50V
L
= -2A; IB1= -IB2= -0.2A
I
C
0.2 μs
h
t
stg
t
f
FE-1
Storage Time 0.7 μs
Fall Time
Classifications
Q R S
70-140 100-200 140-280
isc Website：www.iscsemi.cn
2
Loading...