Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB900
DESCRIPTION ·
·With
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier and switching
PINNING
TO-220C package
applications
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj Junction temperature 150
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -5 V
Collector current (DC) -4 A
Collector dissipation
℃)
T
=25℃
C
40 W
℃
T
stg
Storage temperature -50~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB900
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
I
CBO
I
CEO
I
EBO
h
FE
BE
Collector-emitter breakdown voltage IC=-1mA; IB=0 -50 V
Collector-base breakdown voltage IC=-1mA; IE=0 -50 V
Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V
Base-emitter on voltage IC=-2A ; VCE=-4V -1.4 V
Collector cut-off current VCB=-50V; IE=0 -0.1 mA
Collector cut-off current VCE=-50V; IE=0 -1.0 mA
Emitter cut-off current VEB=-5V; IC=0 -0.1 mA
DC current gain IC=-1A ; VCE=-4V 40
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB900
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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