Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB896 2SB896A
DESCRIPTION ·
·With
·Low collector saturation voltage
·High speed switching
APPLICATIONS
·For low voltage switching applications
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
CBO
CEO
EBO
I
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector -5 V
Collector current (DC) -10 A
℃)
2SB896 -40
Open emitter
2SB896A
2SB896 -20
Open base
2SB896A
-50
-40
V
V
I
CM
P
C
Tj Junction temperature 150
T
stg
Collector current-Peak -15 A
T
Collector power dissipation
Storage temperature -50~150
=25℃
C
35 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB896 2SB896A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
Collector-emitter
breakdown voltage
2SB896A
IC=-10mA; IB=0
V
-40
Collector-emitter saturation voltage IC=-7A; IB=-0.23A -0.6 V
Base-emitter saturation voltage IC=-7A; IB=-0.23A -1.5 V
2SB896 VCB=-40V; IE=0
2SB896 -20
Collector
cut-off current
2SB896A V
=-50V; IE=0
CB
-50
Emitter cut-off current VEB=-5V; IC=0 -50
μA
μA
DC current gain IC=-0.1A ; VCE=-2V 45
DC current gain IC=-2A ; VCE=-2V 60 260
ob
f
T
Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF
Transition frequency IC=-0.5A ; VCE=-10V 150 MHz
Switching times
t
on
t
stg
t
f
Turn-on time 0.1
Storage time 0.5
Fall time
h
Classifications
FE-2
R Q P
60-120 90-180 130-260
I
=-2A ; IB1=-IB2=-66mA
C
0.1
μs
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB896 2SB896A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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