Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB871
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·High Speed Switching
·Low Collector Saturation Voltage
: V
CE(sat)
APPLICATIONS
·Designed for low voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= -20V(Min)
= -0.6V(Max)@IC= -10A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage -40 V
Collector-Emitter Voltage -20 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -10 A
Collector Current-Peak -20 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
40 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB871
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
f
(sat)
(sat)
OB
T
Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -20 V
Collector-Emitter Saturation Voltage IC= -10A; IB= -0.33A -0.6 V
Base-Emitter Saturation Voltage IC= -10A; IB= -0.33A -1.5 V
Collector Cutoff Current VCB= -40V; IE= 0 -50
Emitter Cutoff Current VEB= -5V; IC= 0 -50
DC Current Gain IC= -0.1A; VCE= -2V 45
DC Current Gain IC= -3A; VCE= -2V 60 260
Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 400 pF
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 100 MHz
μA
μA
Switching Times
Turn-On Time 0.1
= -3A; IB1= -IB2= -0.1A
Storage Time 0.5
Fall Time
I
C
0.1
Classifications
h
t
on
t
s
t
f
FE-2
R Q P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
2
μs
μs
μs
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