Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB867
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SD959
·Excellent linearity of h
APPLICATIONS
·For power switching applications
PINNING
PIN DESCRIPTION
FE
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) -3 A
ICM Collector current -peak -6 A
PC Collector power dissipation
Collector-base voltage Open emitter -130 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -7 V
℃)
T
=25℃
C
30 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB867
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.5A ; VCE=-10V 30 MHz
Switching times
ton Turn-on time 0.3 μs
ts Storage time 1.1 μs
Collector-emitter breakdown voltage IC=-10mA ;IE=0 -80 V
Collector-emitter saturation voltage IC=-2A; IB=-0.1A -0.5 V
Base-emitter saturation voltage IC=-2A; IB=-0.1A -1.5 V
Collector cut-off current VCB=-100V;IE=0 -10 μA
Emitter cut-off current VEB=-5V; IC=0 -50 μA
DC current gain IC=-0.1A ; VCE=-2V 45
DC current gain IC=-0.5A ; VCE=-2V 60 260
I
=-0.5A
C
I
=-IB2=-50mA
B1
tf Fall time
h
60-120 90-180 130-260
classifications
FE-2
R Q P
2
0.3 μs
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB867
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB867
4
Page 5
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB867
5
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