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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB863
DESCRIPTION ·
·With TO-3P(I) package
·Complement to type 2SD1148
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -10 A
IB Base current -1 A
PC Collector power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter -140 V
Collector-emitter voltage Open base -140 V
Emitter-base voltage Open collector -5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB863
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
Collector-emitter breakdown voltage IC=-50mA; IB=0 -140 V
Collector-emitter saturation voltage IC=-5.0A ;IB=-0.5A -0.60 -2.0 V
VBE Base-emitter on voltage IC=-5A ; VCE=-5V -0.96 -1.5 V
I
Collector cut-off current VCB=-140V; IE=0 -5.0 μA
CBO
I
Emitter cut-off current VEB=-5V; IC=0 -5.0 μA
EBO
h
DC current gain IC=-1A ; VCE=-5V 55 160
FE-1
h
DC current gain IC=-5A ; VCE=-5V 25
FE-2
fT Transition frequency IC=-1A ; VCE=-10V 15 MHz
COB Collector output capacitance IC=0;f=1MHz ; VCB=-10V 400 pF
h
Classifications
FE-1
R O
55-110 80-160
2
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB863
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
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Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB863
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