Datasheet 2SB861 Datasheet (HIT)

2SB861

Silicon PNP Triple Diffused

Application

Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138

Outline

TO-220AB

1. Base

2. Collector

1

2

3

(Flange)

3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

PC*

1

Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C

Note: 1. Value at TC = 25°C

–200 V
–150 V
–6 V
–2 A
–5 A

1.8 W
30 W

2SB861

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown

V

(BR)CBO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
DC current transfer ratio h

Collector to emitter saturation

h
V

CBO

FE1

FE2

CE(sat)

voltage
Base to emitter voltage V

BE

Collector output capacitance Cob — 30 — pF VCB = –100 V, IE = 0,

Notes: 1. The 2SB861 is grouped by h

2. Pulse test

BC

60 to 120 100 to 200

–150 — — V IC = –50 mA, RBE = ∞

–6 — — V IE = –5 mA, IC = 0

——–1µAVCB = –120 V, IE = 0

1

*

60 — 200 VCE = –4 V, IC = –50 mA
60 — — VCE = –10 V, IC = –500 mA*
——–3V I

= –500 mA, IB = –50 mA

C

——–1V VCE = –4 V, IC = –50 mA

f = 1 MHz

as follows.

FE1

2

Maximum Collector Dissipation Curve

40

30

20

T

C

10

Collector power dissipation Pc (W)

0

1.8 W

50

Ta

100

Ambient temperature Ta (°C)

Case temperature T

150

(°C)

C

200

Area of Safe Operation

–10

–5

IC

(Continuous)

(A)

C

–2

(–15 V, –2 A)

(max)

DC Operation (T

–1.0
–0.5

C

= 25°C)

(–60 V, –0.4 A)

–0.2

Collector Current I

–0.1

(–150 V, –65 mA)

–0.05

–2 –5 –10 –20 –50 –100–200

Collector to emitter Voltage V

CE

(V)

2

2SB861

Typical Output Characteristics

–1.0

–0.8

(A)

C

–0.6

TC = 25°C

–8

–7

–6

–5

–4
–3

–0.4

–2

Collector Current I

–0.2

–1 mA
IB = 0

0 –4 –8 –12 –16 –20

Collector to emitter Voltage V

DC Current Transfer Ratio vs.

Collector Current

500

V

= –4 V

FE

CE

200

100

TC = 75°C

25

–25

50

20

CE

(V)

Typical Transfer Characteristics

–1,000

VCE = –4 V

–500

(mA)

C

TC = 75°C

–200

25 –25

–100

–50

–20

Collector current I

–10

–5

–0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0

Base to emitter voltage V

Collector to Emitter Saturation

Voltage vs. Collector Current

–10

IC = 10 I

B

–5

–2

(V)

–1.0

CE (sat)

V

–0.5

TC = 75°C

–25

BE

(V)

25

DC current transfer ratio h

10

5

–10 –20 –50 –100 –200 –500–1,000

Collector current IC (mA)

–0.2

Collector to emitter saturation voltage

–0.1

–10 –20 –50 –100 –200 –500–1,000

Collector current I

C

(mA)

3

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX