Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB856
DESCRIPTION
·Collector Current: IC= -3A
·Low Collector Saturation Voltage
: V
CE(sat)
·High Collector Power Dissipation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= -1.2V(Max)@IC= -2A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage -50 V
Collector-Emitter Voltage -50 V
Emitter-Base Voltage -4 V
Collector Current-Continuous -3 A
Total Power Dissipation
C
@ TC=25℃
Junction Temperature 150
J
Storage Temperature Range -45~150
25 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB856
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
h
h
h
Collector-Emitter Breakdown Voltage IC= -50mA ; RBE= ∞ -50 V
Collector-Base Breakdown Voltage IC= -5mA ; IE= 0 -50 V
Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V
Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.2 V
Base-Emitter On Voltage IC= -1A; VCE= -4V -1.5 V
Collector Cutoff Current VCB= -20V; IE= 0 -100 μA
DC Current Gain IC= -1A; VCE= -4V 35 200
DC Current Gain IC= -0.1A; VCE= -4V 35
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 35 MHz
Classifications
CBO
FE-1
FE-2
f
(sat)
(on)
T
FE-1
A B C
35-70 60-120 100-200
isc Website：www.iscsemi.cn
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