Page 1
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
查询2SB0792A供应商
Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD814
Features
■
●
High collector to emitter voltage V
●
Low noise voltage NV.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB792
2SB792A
2SB792
2SB792A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–150
–185
–150
–185
–100
–55 ~ +150
–5
–50
200
150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : I
(2SB792)
(2SB792A)
2F
Unit: mm
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current
transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
*
hFE Rank classification
Marking
Symbol
Rank R S T
h
FE
2SB792 IR IS IT
2SB792A 2FR 2FS —
Symbol
2SB792
2SB792A
2SB792
2SB792A
I
CBO
V
V
h
V
f
T
C
NV
FE
CEO
EBO
*
CE(sat)
ob
VCB = –100V, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
IC = –30µA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
130 ~ 220 185 ~ 330 260 ~ 450
Conditions
min
–150
–185
–5
130
130
typ
200
4
150
max
–1
450
330
–1
Unit
µA
V
V
V
MHz
pF
mV
1
Page 2
Transistor 2SB792, SB792A
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
CE
–100
–90
–80
)
mA
(
–70
C
–60
–50
–40
–30
Collector current I
–20
–10
0
0 –12–10–8–2 –6–4
I
=–10mA
B
–9mA
–8mA
–7mA
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
Ta=75˚C
25˚C
–25˚C
0
–0.1 –1 –10 –100–0.3 –3 –30
VCE=–5V
Collector current IC (mA
Ta=25˚C
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
)
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
250
225
)
200
MHz
(
175
T
150
125
100
75
50
Transition frequency f
25
0
0.1 1 10 1000.3 3 30
IC — V
BE
VCE=–5V
25˚C
Ta=75˚C
fT — I
–25˚C
E
VCB=–10V
Ta=25˚C
Emitter current IE (mA
)
)
Cob — V
10
)
9
pF
(
8
ob
7
6
5
4
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Loading...