Page 1
PNP / NPN Epitaxial Planar Transistors
2SB772
2SD882
P b
Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Total Cevice Disspation Ta=25°C
Total Cevice Disspation Tc=25°C
Junction Temperature
Storage, Temperture
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C(DC)
I
C(Pulse)
I
B(Pulse)
P
D
P
D
T
j
Tstg
TO-126
1.EMITTER
2.COLLECTOR
3.BASE
PNP/2SB772
-30
-40
-5.0
-3.0
-7.0
-0.6 0.6
-55 to +150
NPN/2SD882
5.0
3.0
7.0
1.0
10
150
30
40
1
2
3
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W
°C
°C
Device Marking
2SB772=B772 , 2SD882=D882
ELECTORICAL CHARACTERISTICS
Characteristics
Collect-Emitter Breakdown Voltage (IC=-10/10 mAdc, IB=0)
Collect-Base Breakdown Voltage (IC=-100/100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-100/100 µAdc, IC=0)
Collector Cutoff Current (VCE=-30/30 Vdc, IB=0)
Collector Cutoff Current (VCB=-40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB=-6.0/6.0Vdc, IC=0)
NOTE: 1.PW ≤ 350us, duty cycle ≤ 2%
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CBO
I
EBO
UnitMaxMin
Vdc--30/30
Vdc--40/40
Vdc--5.0/5.0
µAdc-1.0/1.0-
µAdc-1.0/1.0-
µAdc-1.0/1.0-
WEITRON
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1/5 Rev.B 14-Aug-07
Page 2
2SB772
2SD882
ELECTRICAL CHARACTERISTICS (T
Characteristics
ON CHARACTERISTICS
DC Current Gain
(IC= -1.0/1.0 Adc, V
DC Current Gain
(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Base-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Current-Gain-Bandwidth Product
(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)
Classification of h
CE=-2.0/2.0Vdc
FE(1)
Rank
)
R
=25 C unless otherwise noted) (Countinued)
A
Symbol
h
O
FE
h
FE
V
CE(sat)
V
BE(sat)
(1)
(2)
f
T
60
32
-
-
-
Y
TYP
-
-
-
-
80/90
Max
400
-
-0.5/0.5
-2.0/2.0
-
UnitMin
-
-
Vdc
Vdc
MHz
GR
Range
60-120
100-200 160-320
200-400
WEITRON
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Page 3
2SB772
2SD882
F1. Total Power Dissipation VS.
Ambient Temperature
NOTE
1. Aluminum heat sink
10
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
8
infinite
PT-Total Power Dissipation-W
6
4
2
Without heat sink
10
25
cm
9
2
cm
0 cm
2
2
heat si
nk
Ta-Amient Temperature- C
F3. Thermal Resistance VS.
Pulse Width
VCE=10V
I =1.0A
°
0.3
4Rth-Thermal Resistance- C/W
C
30
Duty=0.001
10
3
1
0.1 0.3 1 3 10 30 100 300 1000
PW-Pulse Width-ms
F.2 Derating Curve for All Types
100
S
i
o
10 ms
/
b
/b
l
i
m
i
t
e
d
n
l
i
m
i
t
e
d
100
<
-
1
m
S
L
i
mit
ed
se)
0.1mS
PW
150
=100 us
CEO
V MAX
80
60
D
i
s
s
i
p
a
t
40
20
0
150100500
°
Percentage of Rated Current-%dT-
0
Tc,Case Temperature(°C)
50
F4. Safe Operating Areas
<
PW
-
10
Ic(max),Pulse
Ic(max),DC
3
(Sin
1
0.3
0.1
NOTE
1. Tc=25 C
2. Curves must be derated
0.03
-Ic,Collector Current(A)
0.01
linearly with increase of
temperature and Duty Cycle.
1 3 6 10 30 60 100
V -Collector to Emitter Voltage-V
CE
( )
Duty Cycle 50 %
1
0
m
S
Dissi
pation
Limi
ted
gle n
onre
petitive pul
s
F5. Collector Current VS. Collector
To Emitter Voltage
-2.0
-1.6
-1.2
-0.8
-0.4
-Ic,Collector Current(A)
0
0
-4 -8 -12 -16 -20
v
-Collector-Emitter Voltage(V)
CE
WEITRON
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2SB772
IB=-10mA
IB=-9mA
IB=-8MA
IB=-7mA
IB=-6mA
Pulse Test
IB=-5mA
IB=-4mA
IB=-3mA
IB=-2mA
IB=-1mA
2SD882
F6. Collector Current VS. Collector
To Emitter Voltage
2.0
1.6
1.2
0.8
0.4
-Ic,Collector Current(A)
0
0
v
IB=10mA
IB=9mA
IB=8MA
IB=7mA
4 8 12 16 20
-Collector-Emitter Voltage(V)
CE
Pulse Test
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
Page 4
2SB772
2SD882
h ,
V -I
BE
FE
F7.
1000
600
300
h
100
60
30
-DC Current Gain
10
6
FE
h ,
3
1
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
2SB772
FE
2SD882
V
BE
2SB772
2SD882
Ic-Collector Current(A)
c
VCE=2.0V
Puse Test
F8.
V , V ,
CE(sat)
10
6
VBE(sat)
0.6
0.3
0.1
0.06
0.03
2SB772
0.01
0.006
0.003
CE(sat)
V -Collector Saturation Voltage(V)
0.001
BE(sat)
V -Base Saturation Voltage(V)
D
2S
0.003 0.01
CE
V
82
8
0.03
0.1
Ic-Collector Current(A)
BE(sat)
2SD882
(sat)
0.3
-I
c
2SB772
113310
C -V ,
F9. f - I
T
1000
300
100
Cooling
(with heat sink)
2SB772
V =5.0V
Forecd air
2SD882
30
10
3
T
f -Gain Bandwidth Product(MHZ)
1
0.01 0.03 0.1 0.3 1
Ic-Collector Current(A)
CE
c
F
F
Cib-Input Capacitance(P )
Cob-Output Capacitance(P )
F10.
300
100
60
30
10
6
3
1 3 6 10 30 60
V -Collector to Base Voltage(V)
CB
V -Emitter to Base Voltage(V)
EB
2S
D882
2SB772
ob
Cib
CB
C -V
ib
2SB772
2S
D882
CE
f=1.0MHz
I =0(Cob)
E
I =0(Cib)
C
Cob
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Page 5
2SB772
2SD882
TO-126 Outline Dimensions
G
φ
H
L
J
K
S
M
D
C
B
E
unit:mm
A
Dim
A
B
C
D
E
G
H
J
K
L
M
S
TO-126
φ
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
2.290TYP
4.480
15.300
2.100
3.900
3.000
MAX
2.900
1.500
0.860
1.370
0.600
7.800
11.000
4.680
15.700
2.300
4.100
3.200
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