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r
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Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
FEATURE
● Power dissipation P
● Collector current I
● Collector-base voltage V
● Operating and storage junction temperature range
T
, T
: -55℃ to +150℃
J
STG
: 0.9 W (Tamb=25℃)
CM
: -1 A
CM
: -60 V
(BR)CBO
PACKAGING INFORMATION
Weight: 0.3900 g (Approximate)
RoHS Compliant Product
Collector
2
3
Base
1
Emitte
2SB764L
PNP Plastic Encapsulated Transistor
TO-92L
G
K
H
J
A
D
B
CE
F
1Emitte
2Collector
3Base
REF.
Millimete
Min. Max.
A 4.70 5.10
B 7.80 8.20
C 13.80 14.20
D 3.70 4.10
E 0.35 0.55
F 0.35 0.45
G 1.27 TYP.
H 1.28 1.58
J 2.44 2.64
K 0.60 0.80
ELECTRICAL CHARACTERISTICS (at T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Collector-Emitter Saturation Voltage V
Base-Emitter Voltage VBE - - -1.2 V IC = -0.5A, IB = -0.05A
Transition Frequency fT - 150 - MHz V
Collector Output Capacitance COB - 20 - pF V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
- - -1 μA V
CBO
- - -1 μA V
EBO
h
60 - 320 V
FE(1)
h
30 - - V
FE(2)
CE(sat)
= 25°C unless otherwise specified)
A
-60 - - V I
-50 - - V I
-5 - - V I
= -10μA, IE = 0
C
= -1mA, IB = 0
C
= -10μA, IC = 0
E
= -50V, IE = 0
CB
= -5V, IC = 0
EB
= -2V, IC = -0.05A
CE
= -2V, IC = -1A
CE
- - -0.7 V IC = -0.5A, IB = -0.05A
= -10V, IC = -0.05A
CE
= -10V, IE = 0, f = 1 MHz
CB
CLASSIFICATION OF h
FE(1)
Rank D E F
Range 60 - 120 100 - 200 160 - 320
01-April-2009 Rev. A Page 1 of 3
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SB764L
PNP Plastic Encapsulated Transistor
2SB764L
01-April-2009 Rev. A Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
2SB764L
PNP Plastic Encapsulated Transistor
2SB764L
01-April-2009 Rev. A Page 3 of 3
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