Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB763
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
·High Collector Power Dissipation
·Complement to Type 2SD858
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= -60V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage -60 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -5 A
Collector Current-Peak -10 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
60 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB763
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE(on)
I
CEO
I
CES
I
EBO
h
FE-1
h
FE-2
Switching Times
Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V
Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.5 V
Base-Emitter On Voltage IC= -3A; VCE= -4V -1.6 V
Collector Cutoff Current VCE= -30V; IB= 0 B -700
Collector Cutoff Current VCE= -60V; VBE= 0 -400
Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA
DC Current Gain IC= -1A; VCE= -4V 40 250
DC Current Gain IC= -3A; VCE= -4V 20
μA
μA
Turn-On Time 0.2
I
= -6A; IB1= -IB2= -0.6A
C
Turn-Off T ime
1.4
Classifications
h
t
t
on
off
FE-1
R Q P
40-90 70-150 120-250
isc Website：www.iscsemi.cn
2
μs
μs
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