Datasheet 2SB755R Specification

2SB755

SILICON PNP

TRIPLE

DIFFUSED

TYPE

(PCT

PROCESS)

POWER

AMPLIFIER

FEATURES

•

High

Breakdown

High

Transition

Complementary

Recommended

Frequency

MAXIMUM

Amplifier

RATINGS

CHARACTERISTIC

Collector-Base

Collector-Emitter

Emitter-Base

Collector

Emitter

Collector

Junction

Storage

Voltage

Current

Current

Power

Temperature

Temperature Range

APPLICATIONS.

Voltage

Frequency

to

2SD845.

for

80W

High-Fidelity

Output

(Ta=25°c)

Voltage

Voltage

Dissipation

I

(Tc=25°C)

V

=-150V (Min.)

CEO

: f

=20MHz (Typ.)

T

Stage.

„

Audio

SYMBOL

V

CBO

VCEO

v

EBO

IC

IE

PC

Ti

Tstg

RATING

-150

-5

-12

12

120

150

-55^,150

JEDEC

EIAJ

TOSHIBA

Weight

1.

BASE

2.

COLLECTOR

3. EMITTER

—

2

: 10.

8g

(HEAT SINK)

34 A 1A

Unit in

mm

ELECTRICAL

CHARACTERISTICS

CHARACTERISTIC

Collector
Emitter

Collector-

Breakdown

Cut-off

Cut-off

Emitter

Voltage

Current

Current

Emitter-Base

Breakdown

DC

Current Gain

Collector-

Saturation

Base-Emitter

Transition

Collector

Note

Voltage

Emitter

Voltage

Frequency

Output

h

:

Classification

EE

Voltage

Capacitance

TOSHIBA CORPORATION

a

(Ta=25

R : 55V110, :

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C)

SYMBOL TEST

I

CB0

lEBO

v

(BR)

V

(BR)EB0

h

FE

(Note)

V

CE(sat)

VBE

f

T

Cob

V

VEB=-5V,

IC=-0.1A,

CEO

I

E

VCE="5V,

I

C

VCE=-5V, Ic=-5A

V

C

=-

V

CB

80M.60

—

2»e

=-150V,

CB

=-10mA,

=-5V,

E=-10V,

1 0V

CONDITION

=0

I

E

lc=0

Ib=0

=0

I

c

Ic=-1A 55

I

=-0.5A

B

I

=-1A

C

f

,

=0

,

=lMHz

E

MIN.

-

-

-150

-5

-

-

-

-

TYP

-

-

- -

- -

-

-

-

20

450

MAX.

-50

-50

160

-2.0

-1.5

-

-

UNIT

UA
yA

V

MHz

pF

V

V

V

-

V

-12

-8

—

1<1

1U

P.

ic

1 1 1 1 1 1 1

-1000—700—500

'

^

j

A

>

<

£,

^

z

£

CE

—400

"

—200

—100

—70

—50

.—30

-2

n

—2 —4 —6 —8 —10 —12 —14 —16

COLLECTOR-EMITTER

-12

IC -

1

10mA

lB=—

riii

V

BE

VOLTAGE

COMMON EMITTER

=

V

-5V

CE

-6

6

"

i

///

/"

off

COMMON

EMITTER

=

Tc

25°C

2SB755

In

-

h

FE

1I1

Mlli

1 1 1 Mill

=

Tc

100°C

100

COMMON

=

V

G E

-0.01 -0.03

-3

v

—20

V

(V)

CE

fn

H

i-q

e-

M

O
>

s

Eh

A
o

<

co

a

COMMON EMITTER

I

/

C

'-1

_

-0.1

0.05

-0.01

—25

-TTt

-0.03

:: —25

EMITTER

—

5V

-ai

COLLECTOR

v

CE(sat

=

=

10

IB

III

25

-0J.

COLLECTOR

25

1-

—l

-0.3

CURRENT

]

)

-0.3 -1 —3

CURRENT

—

f

In

t

"«5

~*N

V

V

-3 —5

-10

I

U)

C

-c

—5

I

c

T 1

1

-10

(A)

—30

iiiiiiiitfiiiiittiiiiritti i

//

—0.4

—0.8 —1.2 —1.6 —2.0

BASE-EMITTER

VOLTAGE V

SAFE OPERATING AREA

—30

-100

—10

-5

COLLECTOR-EMITTER VOLTAGE

tiiiinii

tuti

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mil

—2.4

-300

BE

V

(V)

—2.i

CE

-1000

(V)

-287-

10

-0.03 —0.1

COLLECTOR CURRENT

Pn

O120

Ph

is

Eh

<;

40

O

pm

25

50

AMBIENT

75 100 125 150

TEMPERATURE

J

-+

^

CUMMUN JJMiTTISJrt

UE

1

—0.3

-1

-

Ta

—

T

c

INFINITE

VS^^,^^.

—

CORPORATION

25

Ta

HEAT

°C

-3

I

C

SINK

Ta

"T"

~f

'

i 1

i II

i

—5

(A)

175

(°C)