Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB754
DESCRIPTION ·
·With TO-3P(I) package
·Complement to type 2SD844
·High collector current :I
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN DESCRIPTION
=-7A
C
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -7 A
IE Emitter current 7 A
PC Collector power dissipation
Collector-base voltage Open emitter -50 V
Collector-emitter voltage Open base -50 V
Emitter-base voltage Open collector -5 V
℃)
Ta=25℃ 2.5
W
TC=25℃ 60
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB754
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter voltage IC=-4A ; VCE=-1V -0.9 -1.2 V
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-1A ; VCE=-5V 10 MHz
COB Collector output capacitance IE=0;f=1MHz ; VCB=-10V 300 pF
Collector-emitter breakdown voltage IC=-50mA ;IB=0 -50 V
Emitter-base breakdown voltage IE=-10mA; IC=0 -5 V
Collector-emitter saturation voltage IC=-4.0A; IB=-0.4A -0.2 -0.4 V
Collector cut-off current VCB=-50V; IE=0 -10
Emitter cut-off current VEB=-5V; IC=0 -10
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-4A ; VCE=-1V 30
μA
μA
h
Classifications
FE-1
O Y
70-140 120-240
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB754
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon Power Transistors 2SB754
4
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