Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB753
DESCRIPTION ·
·With
·Complement to type 2SD843
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
TO-220C package
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -7 A
PC Collector dissipation
Collector-base voltage Open emitter -100 V
Collector-emitter voltage Open base -80 V
Emitter-base voltage Open collector -5 V
℃)
Ta=25℃
T
=25℃
C
1.5
W
40
Tj Junction temperature 150
T
Storage temperature -50~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB753
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 250 pF
fT Transition frequency IC=-1A ; VCE=-4V 10 MHz
Switching times
ton Turn-on time 0.4 μs
Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V
Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.3 -0.5 V
Base-emitter saturation voltage IC=-4A; IB=-0.4A -0.9 -1.4 V
Collector cut-off current VCB=-100V; IE=0 -5 μA
Emitter cut-off current VEB=-5V; IC=0 -5 μA
DC current gain IC=-1A ; VCE=-1V 70 240
DC current gain IC=-4A ; VCE=-1V 30
t
Storage time 2.5 μs
stg
tf Fall time
h
Classifications
FE-1
O Y
70-140 120-240
IB1=- IB2=-0.3A ; VCC=-30V
=10Ω
R
L
0.5 μs
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB753
PACKAGE OUTLINE
3
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
Page 4
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB753
4
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