Page 1
Transistor
2SB0745, 2SB0745A (2SB745, 2SB745A)
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A)
Unit: mm
Features
■
●
Low noise voltage NV.
●
High foward current transfer ratio hFE.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB0745
2SB0745A
2SB0745
2SB0745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
2SB0745
2SB0745A
2SB0745
2SB0745A
Ratings
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Symbol
I
CBO
I
CEO
V
V
V
h
V
V
f
T
NV
FE
CBO
CEO
EBO
*
CE(sat)
BE
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –5V, IE = 2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
min
typ
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
max
–100
–1
–35
–55
–35
–55
–5
180
700
– 0.6
– 0.7
–1
150
150
1.0
1.0
4.1±0.2 4.5±0.1
Unit
nA
µA
V
V
V
V
V
MHz
mV
*
hFE Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
Note.) The Part numbers in the Parenthesis show
conventional part number.
1
Page 2
Transistor 2SB0745, 2SB0745A
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IB — V
BE
–800
–700
–600
)
µA
(
–500
B
–400
VCE=–5V
Ta=25˚C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
IC — V
–120
)
mA
(
–100
–80
C
–60
25˚C
Ta=75˚C
Ta=25˚C
IB=–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
BE
VCE=–5V
–25˚C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
)
)
–100
V
(
–30
CE(sat)
–10
0
0 – 0.5– 0.4– 0.1 – 0.3– 0.2
–3
–1
IC — I
B
VCE=–5V
Ta=25˚C
Base current IB (mA
V
— I
CE(sat)
C
)
IC/IB=10
–300
Base current I
–200
–100
0
0 –1.0– 0.8– 0.2 – 0.6– 0.4
Base to emitter voltage VBE (V
hFE — I
C
600
FE
500
Ta=75˚C
400
300
200
100
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
25˚C
–25˚C
VCE=–5V
Collector current IC (mA
–40
Collector current I
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
)
Base to emitter voltage VBE (V
fT — I
E
500
450
)
400
MHz
(
350
T
300
250
200
150
100
Transition frequency f
50
0
0.1 1 10 1000.3 3 30
Emitter current IE (mA
VCB=–5V
Ta=25˚C
)
)
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 – 1 –10 –100– 0.3 –3 –30
Collector current IC (mA
Cob — V
20
)
18
pF
(
16
ob
14
12
10
8
6
4
2
Collector output capacitance C
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
25˚C
CB
Ta=75˚C
–25˚C
IE=0
f=1MHz
Ta=25˚C
)
)
2
Page 3
Transistor
2SB0745, 2SB0745A
NV — V
160
140
)
120
mV
(
100
80
60
40
Noise voltage NV
20
Rg=100kΩ
0
–1 –3 –10 –30 –100
22kΩ
4.7kΩ
CE
IC=–1mA
=80dB
G
V
Function=FLAT
Collector to emitter voltage VCE (V
NV — I
C
300
240
)
mV
(
180
120
Noise voltage NV
60
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
VCE=–10V
=80dB
G
V
Function=RIAA
Rg=100kΩ
Collector current IC (mA
22kΩ
4.7kΩ
NV — V
300
240
)
mV
(
Noise voltage NV
)
)
mV
(
Noise voltage NV
)
Rg=100kΩ
180
120
60
0
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V
160
140
120
100
80
60
40
– 0.5mA
20
0
1 3 10 30 100
Signal source resistance Rg (kΩ
22kΩ
4.7kΩ
NV — R
IC=–1mA
– 0.1mA
CE
IC=–1mA
=80dB
G
V
Function=RIAA
g
VCE=–10V
=80dB
G
V
Function=FLAT
)
mV
(
Noise voltage NV
)
)
mV
(
Noise voltage NV
)
160
140
120
100
80
60
40
20
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
300
240
180
120
60
0
1 3 10 30 100
Signal source resistance Rg (kΩ
NV — I
C
VCE=–10V
=80dB
G
V
Function=FLAT
Rg=100kΩ
22kΩ
4.7kΩ
Collector current IC (mA
NV — R
– 0.5mA
IC=–2mA
g
VCE=–10V
=80dB
G
V
Function=RIAA
– 0.1mA
)
)
3
Page 4
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
Loading...