Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB744
DESCRIPTION
·High Collector Current -IC= -3A
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Complement to Type 2SD794
APPLICATIONS
·Designed for use in audio frequency amplifier.
ABSOLUTE MAXIMUM RATINGS(T
= -45V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage -70 V
Collector-Emitter Voltage -45 V
Emitter-Base Voltage -5 V
Collector Current-Continuous -3 A
Collector Current-Pulse -5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
10
W
1
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon PNP Power Transistor 2SB744
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(sat)
V
BE(sat)
I
I
h
h
C
CBO
EBO
FE-1
FE-2
f
T
OB
Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A B -2.0 V
Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A B -2.0 V
Collector Cutoff Current VCB= -45V; IE= 0 -1.0 μA
Emitter Cutoff Current VEB= -3V; IC= 0 -1.0 μA
DC Current Gain IC= -20mA; VCE= -5V 30
DC Current Gain IC= -0.5A; VCE= -5V 60 320
Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V 45 MHz
Output Capacitance
h
Classifications
FE-2
R Q P
I
=0; VCB= -10V, f
E
= 1MHz
test
60 pF
60-120 100-200 160-320
isc Website：www.iscsemi.cn
2
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