Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB743
DESCRIPTION ·
·With TO-126 package
·Low collector saturation voltage
·Excellent h
linearity
FE
APPLICATIONS
·For audio frequency power amplifier
and general purpose applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -0.6 A
B
Collector-base voltage Open emitter -40 V
Collector-emitter voltage Open base -30 V
Emitter-base voltage Open collector -5 V
Collector current (DC) -3 A
Collector current-Peak -5 A
℃)
Ta=25℃
P
C
T
j
T
stg
Collector power dissipation
TC=25℃
Junction temperature 150
Storage temperature -55~150
1.0
W
10
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB743
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
h
FE-1
FE-2
f
T
Collector-emitter breakdown voltage IC=-10mA; IB=0 -30 V
Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -2.0 V
Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -2.0 V
Collector cut-off current VCB=-40V; IE=0 -1 μA
Emitter cut-off current VEB=-5V; IC=0 -1 μA
DC current gain IC=-20mA ; VCE=-5V 30
DC current gain IC=-1A ; VCE=-5V 60 320
Transition frequency IC=-0.1A ; VCE=-5V 55 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SB743
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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