Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB707 2SB708
DESCRIPTION ·
·With TO-220C package
·Complement to type 2SD568/569
APPLICATIONS
·For low frequency power amplifier
low speed switching industrial use
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current -7 A
ICM Collector current-peak
IB Base current -3.5 A
Collector-base voltage Open emitter -80 V
Collector-emitter voltage
Emitter-base voltage Open collector -7 V
℃)
2SB707 -60
2SB708
Open base
-80
-15 A
V
Ta=25℃ 1.5
PC Collector power dissipation
=25℃ 40
T
C
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
W
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB707 2SB708
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SB707 -60
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
Collector-emitter
breakdown voltage
2SB708
Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -0.5 V
Base-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V
Collector cut-off current VCB=-60V; IE=0 -10 μA
IC=-10mA; IB=0
V
-80
I
Emitter cut-off current VEB=-5V; IC=0 -10 μA
EBO
h
DC current gain IC=-3A ; VCE=-1V 40 200
FE-1
h
DC current gain IC=-5A ; VCE=-1V 20
FE-2
h
classifications
FE-2
R O Y
40-80 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB707 2SB708
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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