Page 1
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB705/705A/705B
DESCRIPTION ·
·With MT-200 package
·Complement to type 2SD745/745A/745B
APPLICATIONS
·Audio frequency power amplifier
·Suitable for output stages of 60~120W audio
amplifiers and voltage regulators
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SB705 -140
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage Open collector -5 V
EBO
2SB705A -150
2SB705B
2SB705 -140
2SB705A -150
2SB705B
Open emitter
Open base
V
-160
V
-160
IC Collector current -10 A
ICM Collector current-peak -15 A
PT Total power dissipation TC=25℃ 120 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB705/705A/705B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SB705 -140
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=-0.2A ; VCE=-5V 17 MHz
COB Output capacitance IE=0; VCB=-10V;f=1MHz 430 pF
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=-5A;IB=-0.5 A -1.5 V
Base-emitter saturation voltage IC=-5A;IB=-0.5 A -2.0 V
Collector cut-off current VCB=-140V; IE=0 -50
Emitter cut-off current VEB=-3V; IC=0 -50
DC current gain IC=-50mA ; VCE=-5V 20
DC current gain IC=-2A ; VCE=-5V 40 200
2SB705A -150
2SB705B
=-25mA; IB=0
I
C
V
-160
μA
μA
h
classifications
FE-2
S R Q
40-80 60-120 100-200
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon PNP Power Transistors 2SB705/705A/705B
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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